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Questions without a selected answer in Electronic Devices

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GATE ECE 2026 | Question: 4
Consider carrier transport in a Zener diode in the breakdown region.Which is the dominant transport mechanism for current flow in this case?DriftDiffusionTunnelingBallist...
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GATE ECE 2026 | Question: 8
Consider the circuit shown in the Figure with $V_{i}=3 \mathrm{~V}$ and $V_{C C}=12 \mathrm{~V}$.Assume $V_{B E}=0.7 \mathrm{~V}$ and $\beta_{d c}=99$ for the BJT.Which o...
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GATE ECE 2026 | Question: 15
Consider a $\text{p-n}$ junction diode when it is forward biased with $2$ V.Which of the following is/are the correct magnitude(s) of the energy difference between quasi ...
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GATE ECE 2026 | Question: 19
Figure shows the output characteristics of two different Bipolar JunctionTransistors (BJT), BJT $1$ with magnitude of Early voltage $\left|V_{A 1}\right|$, and BJT $2$ wi...
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GATE ECE 2026 | Question: 40
A small signal source, $V_{i}(t)=A \cos \left(10^{5} t\right)+B \sin \left(10^{7} t\right)$ is applied to a BJT circuit as shown in the Figure.Assume zero source resistan...
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GATE ECE 2026 | Question: 44
Consider an LED based on a direct bandgap semiconductor material with energy bandgap $1.3$ eV.Given: Plank's constant, $h=6.63 \times 10^{-34} \mathrm{~J} \mathrm{~s}$ an...
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GATE ECE 2026 | Question: 50
An $n$-channel MOSFET is connected as shown in the Figure.Assume $V_{T H}=1 \mathrm{~V}, V_{D D}=5 \mathrm{~V}$, and $\mu C_{o x}\left(\frac{W}{L}\right)=2 \mathrm{~mA} \...
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GATE ECE 2026 | Question: 54
Consider that the concentration of electrons in a semiconductor bar varies linearly from $2 \times 10^{17} \mathrm{~cm}^{-3}$ at $x=1 \mu \mathrm{~m}$ to $1 \times 10^{16...
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GATE ECE 2025 | Question: 21
Which of the following can be used as an n-type dopant for silicon?Select the correct option(s).ArsenicBoronGalliumPhosphorous
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GATE ECE 2025 | Question: 36
The intrinsic carrier concentration of a semiconductor is $2.5 \times 10^{16} / \mathrm{m}^{3}$ at $300 \: \mathrm{K}$.If the electron and hole mobilities are $0.15 \math...
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GATE ECE 2025 | Question: 38
The electron mobility $\mu_{\mathrm{n}}$ in a non-degenerate germanium semiconductor at $300 \: \mathrm{K}$ is $0.38 \mathrm{~m}^{2} / \mathrm{Vs}$.The electron diffusivi...
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GATE ECE 2024 | Question: 12
​​​​For non-degenerately doped n-type silicon, which one of the following plots represents the temperature $(T)$ dependence of free electron concentration $(n)$ ?
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GATE ECE 2024 | Question: 16
​​​The free electron concentration profile $n(x)$ in a doped semiconductor at equilibrium is shown in the figure, where the points $\mathrm{A}, \mathrm{B}$, and $\mathrm{...
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GATE ECE 2024 | Question: 51
Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of $100 \mathrm{~nm}$, a fixed positive oxide charge of $10^{-8} \mathrm{C} / \mathrm{cm}^{2}...
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GATE ECE 2024 | Question: 53
A non-degenerate n-type semiconductor has $5 \%$ neutral dopant atoms. Its Fermi level is located at $0.25 \mathrm{eV}$ below the conduction band $\left(E_{C}\right)$ and...
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GATE ECE 2024 | Question: 55
The photocurrent of a $\text{PN}$ junction diode solar cell is $1 \mathrm{~mA}$. The voltage corresponding to its maximum power point is $0.3 \mathrm{~V}$. If the thermal...
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GATE ECE 2023 | Question: 6
In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known asdegenerate $\text{n}$-type.degenerate $\text{p}$-type.non-deg...
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GATE ECE 2023 | Question: 7
For an intrinsic semiconductor at temperature $\text{T}=0 \; \text{K}$, which of the following statement is true?All energy states in the valence band are filled with ele...
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GATE ECE 2023 | Question: 9
For a $\text{MOS}$ capacitor, $\text{V}_{\mathrm{fb}}$ and $\text{V}_{\mathrm{t}}$ are the flat-band voltage and the threshold voltage, respectively. The variation of the...
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GATE ECE 2023 | Question: 46
In an extrinsic semiconductor, the hole concentration is given to be $1.5 n_{i}$ where $n_{i}$ is the intrinsic carrier concentration of $1 \times 10^{10} \mathrm{~cm}^{-...
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GATE ECE 2023 | Question: 51
In a semiconductor device, the Fermi-energy level is $0.35 \; \mathrm{eV}$ above the valence band energy. The effective density of states in the valence band at $T=300 \m...
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GATE ECE 1997 | Question 2.3
For a $\text{MOS}$ capacitor fabricated on a $p$-type semiconductor, strong inversion occurs whensurface potential is equal to Fermi potentialsurface potential is zerosur...
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GATE ECE 1997 | Question 4.6
The intrinsic carrier density at $300 \mathrm{~K}$ is $1.5 \times 10^{10}$ / $\mathrm{cm}^{3}$, in silicon. For $n$-type silicon doped to $2.25 \times$ $10^{15}$ atoms $/...
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GATE ECE 1997 | Question 18
An $n$-type silicon bar is doped uniformly by phosphorous atoms to a concentration $4.5 \times 10^{13} / \mathrm{cc}$. The bar has cross-section of $1 \mathrm{~mm}^{2}$ a...
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GATE ECE 2001 | Question: 2.10
In the figure, the $\text{LED}$emits light when both $S_{1}$ and $S_{2}$ are closed.emits light when both $S_{1}$ and $S_{2}$ are open.emits light when only of $S_{1}$ or...
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GATE ECE 1998 | Question 1.12
The electron and hole concentrations in a intrinsic semiconductor are $n_i$ and $p_i$ respectively. When doped with a $p$-type material, these change to $n$ and $p$, resp...
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GATE ECE 1998 | Question 1.15
A long specimen of $p$-type semiconductor materialis positively chargedis electrically neutralhas an electric field directed along its lengthacts as a dipole
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GATE ECE 1998 | Question: 1.40
The units of $\frac{q}{k T}$ are$\mathrm{V} $$\mathrm{V}^{-1}$$\mathrm{J} $$\mathrm{J} / \mathrm{K}$
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GATE ECE 1998 | Question 14
The $\text{JFET}$ in the circuit of the figure is characterised by the parameters $\mathrm{I}_{\mathrm{DSS}}=4 \; \mathrm{MA}$ and $\mathrm{V}_{p}=-4 \mathrm{V}$.Find$\ma...
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GATE ECE 2003 | Question: 6
$n$-type silicon is obtained by doping silicon withGermaniumAluminiumBoronPhosphorus
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