0 0 votes The neutral base width of a bipolar transistor, biased in the active region, is $0.5 \; \mu \mathrm{m}$. The maximum electron concentration and the diffusion constant in the base are $10^{14} / \mathrm{cm}^{3}$ and $\mathrm{D}_{n}$ $=25 \mathrm{~cm}^{2} / \mathrm{sec}$ respectively. Assuming negligible recombination in the base, the collector current density is (the electron charge is $1.6 \times 10^{-19}$ coulomb) $800 \mathrm{~A/cm}^{2}$ $8 \mathrm{~A/cm}^{2}$ $200 \mathrm{~A/cm}^{2}$ $2 \mathrm{~A/cm}^{2}$ BJT and MOSFET Amplifiers gate2004-ec bipolar-junction-transistor carrier-transport numerical-answers electronic-devices + – admin 1.1k views answer comment Share Follow Add Sync Questions Print 0 reply Please log in or register to add a comment.
0 0 votes These is my solution to the problem given above Chinmayvp01 answered Sep 2, 2023 Chinmayvp01 comment Share Follow 0 reply Please log in or register to add a comment.
