Recent questions tagged electronic-devices

An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$.A hole of radius $b$ (b < a) ia now drilled along the len...

An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$.The magnetic field at a distance $r$ from the center of t...

In the CMOS circuit shown, electron and hole mobilities are equal, and $M1$ and $M2$ are equally sized. The device $M1$ is in the linear region if$V_{in}\lt 1.875\:V$$1.8...

The source of a silicon ($n_i=10^{10}\:per\:cm^3$) n-channel MOS transistor has an area of $1\:sq\:\mu m$ and a depth of $1\:\mu m$. If the dopant density in the source i...

The $i-v$ characteristics of the diode in the circuit given below are$$i = \begin{cases} \frac{v-0.07}{500}\:A, & v\ge0.7\:V \\ \:\:\:\:\:\:\:\:0\:A, & v \lt 0.7\:V \en...

In the following figure, $C_1$ and $C_2$ are ideal capacitors. $C_1$ has been charged to $12\:V$ before the ideal switch $S$ is closed at $t=0$. The current $i(t)$ for al...

The current $i_b$ through the base of a silicon $npn$ transistor is $1+0.1\cos(10000\pi t)\:mA$. At $300\:K$, the $r_\pi$ in the small signal model of the transistor is$2...

A solar cell of area $1.0\:cm^{2},$ operating at $1.0$ sun intensity, has a short circuit current of $20\: mA$, and an open circuit voltage of $0.65\: V$. Assuming room t...

Red (R), Green(G) and Blue (B) Light Emitting Diodes (LEDs) were fabricated using $\text{p-n}$ junctions of three different inorganic semiconductors having different band...

The circuit shown in the figure is used to provide regulated voltage $(5 V)$ across the $1\: k\Omega$ resistor. Assume that the Zener diode has a constant reverse breakdo...

There are two photolithography systems: one with light source of wavelength $\lambda _{1}=156\:nm$ (System $1$) and another with light source of wavelength $\lambda _{2}=...

A $\text{p-n}$ step junction diode with a contact potential of $0.65\:V$ has a depletion width of $1\:\mu m$ at equilibrium. The forward voltage (in volts, correct to two...

In the circuit shown below, the op-amp is ideal and Zener voltage of the diode is $2.5\: volts$. At the input, unit step voltage is applied, i.e. $v_{IN}\left ( t \right ...

In a $\text{p-n}$ junction diode at equilibrium, which one of the following statements is NOT TRUE?The hole and electron diffusion current components are in the same dire...

An electron $(q_1)$ is moving in free space with velocity $10^5$ m/s towards a stationary electron $(q_2)$ far away. The closest distance that this moving electron gets t...

The switch in the circuit, shown in the figure, was open for a long time and is closed at $t=0$. The current $i(t)$ (in ampere) at $t=0.5$ seconds is ____________

An abrupt $pn$ junction (located at $x=0$) is uniformly doped on both $p$ and $n$ sides. The width of the depletion region is $W$ and the electric field variation in the ...

A MOS capacitor is fabricated on $p$-type Si (Silicon) where the metal work function is $4.1$ eV and electron affinity of Si is $4.0$ eV. $E_C-E_F=0.9$ eV, where $E_C$ an...

In the figure, $D1$ is a real silicon $pn$ junction diode with a drop of $0.7V$ under forward bias condition and $D2$ is a Zener diode breakdown voltage of $-6.8V$. The i...

An n-channel enhancement mode MOSFET is biased at $V_{GS}$ >$V_{TH}$ and $V_{DS}$ $(V_{GS}-V_{TH})$, where $V_{GS}$ is the gate-to-source voltage, $V_{DS}$ is the drai...

Consider an $n$-channel MOSFET having width $W$, length $L$, electron mobility in the channel $\mu _{n}$ and oxide capacitance per unit area $C_{ox}$. If gate-to-source $...

As shown , a uniformly doped Silicon bar of length $L=0.1\mu m$ with a donor concentration $N_{D}=10^{16}cm^{-3}$ is illuminated at $x=0$ such that electron and hole pair...

The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of $n=1 \times 1...

As shown, two Silicon (Si) abrupt $p-n$ junction diodes are fabricated with uniform donor doping concentrations of $ N_{D1}=10^{14} cm^{-3} $ and $N_{D2}=10^{16}cm^{-3}$ ...

An $n^+-n$ Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of $N_{D1}=1\times 10^{18}cm^{-3}$ and $N_{D2}=1\times 10^{15}cm^{-3}$...

In the circuit shown, the positive angular frequency $\omega$ (in radians per second) at which the magnitude of the phase difference between the voltages $V_1$ and $V_2$ ...