Recent questions tagged p-n-junction

Consider a $\text{p-n}$ junction diode when it is forward biased with $2$ V.Which of the following is/are the correct magnitude(s) of the energy difference between quasi ...

The photocurrent of a $\text{PN}$ junction diode solar cell is $1 \mathrm{~mA}$. The voltage corresponding to its maximum power point is $0.3 \mathrm{~V}$. If the thermal...

The static characteristic of an adequately forward biased $p-n$ junction is a straight line, if the plot is of$\log I $ vs. $\log V$$\log I$ vs. $V$$I$ vs. $\log V$$I$ vs...

A Silicon PN junction at a temperature of $20^{\circ} \mathrm{C}$ has a reverse saturation current of $10$ picoAmperes $(\mathrm{pA})$. The reverse saturation current at ...

The diffusion potential across a $\text{P-N}$ junctiondecreases with increasing doping concentrationincreases with decreasing band gapdoes not depend on doping concentrat...

The depletion capacitance, $\mathrm{C}_{\mathrm{J}}$, of an abrupt $\mathrm{P}-\mathrm{N}$ junction with constant doping on either side varies with reverse bias, $V_{R^{\...

The $p$ – type substrate in a conventional $p n$ – junction isolated integrated circuit should be connected tonowhere, i.e. left floatinga $dc$ ground potentialthe most p...

In a $p^{+} n$ junction diode under reverse bias, the magnitude of electric field is maximum atthe edge of the depletion region on the $p$-sidethe edge of the depletion r...

A $p^{+} n$ junction has a built-in potential of $0.8 \mathrm{~V}$. The depletion layer width at a reverse bias of $1.2 \mathrm{~V}$ is $2 \; \mu \mathrm{m}$. For a rever...

Group I lists four types of $p-n$ junction diodes. Match each device in Group I with one of the options in Group II to indicate the bias condition of that device in its n...

The built-in potential (Diffusion Potential) in a $p-n$ junctionis equal to the difference in the Fermi level of the two sides, expressed in voltsincreases with the incre...

Which of the following is NOT associated with a $\text{p-n}$ junction?Junction CapacitanceCharge Storage CapacitanceDepletion CapacitanceChannel Length Modulation

Consider a silicon $\text{p-n}$ junction at room temperature having the following parameters:Doping on the $n$-side $=1 \times 10^{17} \mathrm{~cm}^{-3}$Depletion width o...

Consider a silicon $\mathrm{p-n}$ junction at room temperature having the following parameters:Doping on the $\mathrm{n}$-side $=1 \times 10^{17} \mathrm{~cm}^{-3}$Deplet...

A silicon $\text{PN}$ junction is forward biased with a constant current at room temperature. When the temperature is increased by $10^{\circ} \mathrm{C}$, the forward bi...

A silicon $P-N$ junction is shown in the figure. The doping in the $P$ region is $5\times10^{16}\:cm^{-3}$ and doping in the $N$ region is $10\times10^{16}\:cm^{-3}$. The...

A one-sided abrupt $pn$ junction diode has a depletion capacitance $C_{D}$ of $50$ $\text{pF}$ at a reverse bias of $0.2 V$. The plot of $1/C^{2}_{D}$ versus the applied ...

A $pn$ junction solar cell of area $1.0\:cm^{2}$, illuminated uniformly with $100\:mW\:cm^{-2}$, has the following parameters: Efficiency $= 15\%$, open circuit voltage $...

In an ideal $pn$ junction with an ideality factor of $1$ at $T=300\:K,$ the magnitude of the reverse-bias voltage required to reach $75\%$ of its reverse saturation curre...

Consider avalanche breakdown in a silicon $p^{+}n$ junction. The $n$-region is uniformly doped with a donor density $N_{D}.$ Assume that breakdown occurs when the magnitu...

Consider a silicon $p-n$ junction with a uniform acceptor doping concentration of $10^{17} cm^{-3}$ on the $p$-side and a uniform donor doping concentration of $10^{16}cm...

The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE?The left sid...

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction ifboth the P – region and the N – region are heav...

The built-in potential of an abrupt p-n junction is $0.75$ V. If its junction capacitance $(C_J)$ at a reverse bias $(V_R)$ of $1.25 \: V$ is $5$ pF, the value of $C_J$ (...

Consider an abrupt PN junction (at $T = 300 K$) shown in the figure. The depletion region width $X_{n}$ on the $N$-side of the junction is $0.2 \mu m$ and the permittivit...

In the figure, assume that the forward voltage drops of the $PN$ diode $D_{1}$ and Schottky diode $D_{2}$ are $0.7\: V$ and $0.3\: V,$ respectively. If ON denotes conduct...

Red (R), Green(G) and Blue (B) Light Emitting Diodes (LEDs) were fabricated using $\text{p-n}$ junctions of three different inorganic semiconductors having different band...

A $\text{p-n}$ step junction diode with a contact potential of $0.65\:V$ has a depletion width of $1\:\mu m$ at equilibrium. The forward voltage (in volts, correct to two...

In a $\text{p-n}$ junction diode at equilibrium, which one of the following statements is NOT TRUE?The hole and electron diffusion current components are in the same dire...