Recent activity in Electronic Devices

In $CMOS$ technology, shallow $P$-well or $N$-well regions can be formed usinglow pressure chemical vapour deposition low energy sputteringlow temperature dry oxidationlo...

A long specimen of $p$-type semiconductor materialis positively chargedis electrically neutralhas an electric field directed along its lengthacts as a dipole

A silicon wafer has $100 \mathrm{~nm}$ of oxide on it and is inserted in a furnace at a temperature above $1000^{\circ} \mathrm{C}$ for further oxidation in dry oxygen. T...

In a semiconductor device, the Fermi-energy level is $0.35 \; \mathrm{eV}$ above the valence band energy. The effective density of states in the valence band at $T=300 \m...

In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known asdegenerate $\text{n}$-type.degenerate $\text{p}$-type.non-deg...

For an intrinsic semiconductor at temperature $\text{T}=0 \; \text{K}$, which of the following statement is true?All energy states in the valence band are filled with ele...

A $p$-type silicon sample has a higher conductivity compared to an $n$-type sample having the same dopant concentration.

The drift velocity of electrons, in siliconis proportional to the electric field for all values of electric fieldis independent of the electric fieldincreases at low valu...

In a $\text{P}$ type silicon sample, the hole concentration is $2.25 \times 10^{15} / \mathrm{cm}^{3}$. If the intrinsic carrier concentration is $1.5 \times 10^{10} / \m...

An $n$-type silicon bar is doped uniformly by phosphorous atoms to a concentration $4.5 \times 10^{13} / \mathrm{cc}$. The bar has cross-section of $1 \mathrm{~mm}^{2}$ a...

An $n$-type silicon bar $0.1 \mathrm{~cm}$ long and $100 \; \mu \mathrm{m}^{2}$ in cross-sectional area has a majority carrier concentration of $5 \times 1020 / \mathrm{m...

In an hydrogen atom $10.2 . \mathrm{eV}$ is given out as radiation when an electron is de-excited to the ground state. The principal quantum number of the excited state i...

$n$-type silicon is obtained by doping silicon withGermaniumAluminiumBoronPhosphorus

Silicon is doped with boron to a concentration of $4 \times 10^{17}$ atoms $/ \mathrm{cm}^{3}$. Assume the intrinsic carrier concentration of silicon to be $1.5 \times 10...

The longest wavelength that can be absorbed by silicon, which has the bandgap of $1.12 \; \mathrm{eV}$, is $1$. If the longest wavelength that can be absorbed by another ...

The bandgap of Silicon at room temperature is$1.3 \; \mathrm{eV}$$0.7 \; \mathrm{eV}$$1.1 \; \mathrm{eV}$$1.4 \; \mathrm{eV}$

Figure shows the output characteristics of two different Bipolar JunctionTransistors (BJT), BJT $1$ with magnitude of Early voltage $\left|V_{A 1}\right|$, and BJT $2$ wi...

In the figure, the $\text{LED}$emits light when both $S_{1}$ and $S_{2}$ are closed.emits light when both $S_{1}$ and $S_{2}$ are open.emits light when only of $S_{1}$ or...

Choose proper substitutes for $\mathrm{X}$ and $\mathrm{Y}$ to make the following statement correct Tunnel diode and Avalanche photodiode are operated in $\mathrm{X}$ bia...

A Silicon PN junction at a temperature of $20^{\circ} \mathrm{C}$ has a reverse saturation current of $10$ picoAmperes $(\mathrm{pA})$. The reverse saturation current at ...

The $p$ – type substrate in a conventional $p n$ – junction isolated integrated circuit should be connected tonowhere, i.e. left floatinga $dc$ ground potentialthe most p...

Consider a straight, infinitely long, current carrying conductor lying on the z-axis. Which one of the following plots (in linear scale) qualitatively represents the depe...

Consider that the concentration of electrons in a semiconductor bar varies linearly from $2 \times 10^{17} \mathrm{~cm}^{-3}$ at $x=1 \mu \mathrm{~m}$ to $1 \times 10^{16...

An $n$-channel MOSFET is connected as shown in the Figure.Assume $V_{T H}=1 \mathrm{~V}, V_{D D}=5 \mathrm{~V}$, and $\mu C_{o x}\left(\frac{W}{L}\right)=2 \mathrm{~mA} \...

Consider an LED based on a direct bandgap semiconductor material with energy bandgap $1.3$ eV.Given: Plank's constant, $h=6.63 \times 10^{-34} \mathrm{~J} \mathrm{~s}$ an...

A small signal source, $V_{i}(t)=A \cos \left(10^{5} t\right)+B \sin \left(10^{7} t\right)$ is applied to a BJT circuit as shown in the Figure.Assume zero source resistan...

Consider a $\text{p-n}$ junction diode when it is forward biased with $2$ V.Which of the following is/are the correct magnitude(s) of the energy difference between quasi ...