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84
GATE ECE 2014 Set 1 | Question: 8
When the optical power incident on a photodiode is $10\:\mu W$ and the responsivity is $0.8\: A/ W,$ the photocurrent generated $(\text{in} \:\mu A)$ is_______.
When the optical power incident on a photodiode is $10\:\mu W$ and the responsivity is $0.8\: A/ W,$ the photocurrent generated $(\text{in} \:\mu A)$ is_______.
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86
GATE ECE 2013 | Question: 17
In a MOSFET operating in the saturation region, the channel length modulation effect causes an increase in the gate-source capacitance a decrease in the transconductance a decrease in the unity-gain cutoff frequency a decrease in the output resistance
In a MOSFET operating in the saturation region, the channel length modulation effect causes an increase in the gate-source capacitancea decrease in the transconductance a...
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87
GATE ECE 2014 Set 3 | Question: 31
In the circuit shown in the figure, the value of node voltage $V_{2}$ is $22+j$ $2$ $V$ $2 +j$ $22$ $V$ $22 -j$ $2$ $V$ $2 -j$ $22$ $V$
In the circuit shown in the figure, the value of node voltage $V_{2}$ is $22+j$ $2$ $V$ $2 +j$ $22$ $V$$22 -j$ $2...
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90
GATE ECE 2014 Set 3 | Question: 8
In MOSFET fabrication, the channel length is defined during the process of isolation oxide growth channel stop implantation poly-silicon gate patterning lithography step leading to the contact pads
In MOSFET fabrication, the channel length is defined during the process ofisolation oxide growthchannel stop implantationpoly-silicon gate patterninglithography step lead...
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91
GATE ECE 2013 | Question: 46
In the circuit shown below, the silicon $npn$ transistor $Q$ has a very high value of $\beta.$ The required value of $R_{2}$ in $k\Omega$ to produce $I_{C} = 1\: mA$ is $20$ $30$ $40$ $50$
In the circuit shown below, the silicon $npn$ transistor $Q$ has a very high value of $\beta.$ The required value of $R_{2}$ in $k\Omega$ to produce $I_{C} = 1\: mA$ is$2...
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92
GATE ECE 2014 Set 2 | Question: 7
In the figure shown, the ideal switch has been open for a long time. If it is closed at t = 0, then the magnitude of the current (in mA) through the $4k \Omega$ resistor at $t= 0^{+}$ is ________.
In the figure shown, the ideal switch has been open for a long time. If it is closed at t = 0, then the magnitude of the current (in mA) through the $4k \Omega$ resistor ...
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95
GATE ECE 2013 | Question: 24
The return loss of a device is found to be $20\:dB.$ The voltage standing wave ratio (VSWR) and magnitude of reflection coefficient are respectively $1.22$ and $0.1$ $0.81$ and $0.1$ $-1.22$ and $0.1$ $2.44$ and $0.2$
The return loss of a device is found to be $20\:dB.$ The voltage standing wave ratio (VSWR) and magnitude of reflection coefficient are respectively $1.22$ and $0.1$$0.81...
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97
GATE ECE 2014 Set 3 | Question: 7
In the figure shown, the value of the current $I$ (in Amperes) is __________.
In the figure shown, the value of the current $I$ (in Amperes) is __________.
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101
GATE ECE 2015 Set 3 | Question: 30
In the circuit shown, the current $I$ flowing through the $50\;\Omega$ resistor will be zero if the value of capacitor $C (\text{in}\: \mu F)$ is ______.
In the circuit shown, the current $I$ flowing through the $50\;\Omega$ resistor will be zero if the value of capacitor $C (\text{in}\: \mu F)$ is ______.
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102
GATE ECE 2014 Set 2 | Question: 10
In CMOS technology, shallow P-well or N-well regions can be formed using low pressure chemical vapour deposition low energy sputtering low temperature dry oxidation low energy ion-implantation
In CMOS technology, shallow P-well or N-well regions can be formed usinglow pressure chemical vapour deposition low energy sputteringlow temperature dry oxidationlow ener...
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104
GATE ECE 2016 Set 2 | Question: 31
In the circuit shown in the figure, the magnitude of the current (in amperes) through $R_{2}$ is ____
In the circuit shown in the figure, the magnitude of the current (in amperes) through $R_{2}$ is ____
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110
GATE ECE 2016 Set 3 | Question: 40
For the circuit shown in the figure, $R_1=R_2=R_3=1\;\Omega,\;L=1\:\mu H$ and $C=1\:\mu F$. If the input $V_{in}=\cos(10^6t)$, then the overall voltage gain $(V_{out}/V_{in})$ of the circuit is _________
For the circuit shown in the figure, $R_1=R_2=R_3=1\;\Omega,\;L=1\:\mu H$ and $C=1\:\mu F$. If the input $V_{in}=\cos(10^6t)$, then the overall voltage gain $(V_{out}/V_{...
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111
GATE ECE 2015 Set 1 | Question: 33
The built-in potential of an abrupt p-n junction is $0.75$ V. If its junction capacitance $(C_J)$ at a reverse bias $(V_R)$ of $1.25 \: V$ is $5$ pF, the value of $C_J$ (in pF) when $V_R = 7.25 \: V$ is ________.
The built-in potential of an abrupt p-n junction is $0.75$ V. If its junction capacitance $(C_J)$ at a reverse bias $(V_R)$ of $1.25 \: V$ is $5$ pF, the value of $C_J$ (...
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113
GATE ECE 2012 | Question: 37
In the CMOS circuit shown, electron and hole mobilities are equal, and $M1$ and $M2$ are equally sized. The device $M1$ is in the linear region if $V_{in}\lt 1.875\:V$ $1.875\:V\lt V_{in}\lt 3.125\:V$ $V_{in}\gt 3.125\:V$ $0\lt V_{in}\lt 5\:V$
In the CMOS circuit shown, electron and hole mobilities are equal, and $M1$ and $M2$ are equally sized. The device $M1$ is in the linear region if$V_{in}\lt 1.875\:V$$1.8...
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115
GATE ECE 2014 Set 1 | Question: 33
In the circuit shown in the figure, the value of capacitor $C\:(\text{in}\: mF)$ needed to have critically damped response $i(t)$ is ____.
In the circuit shown in the figure, the value of capacitor $C\:(\text{in}\: mF)$ needed to have critically damped response $i(t)$ is ____.
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117
GATE ECE 2016 Set 2 | Question: 13
Assume that the diode in the figure has $V_{on}=0.7 \:V$, but it otherwise ideal. The magnitude of the current $i_{2}$ in mA) is equal to _________
Assume that the diode in the figure has $V_{on}=0.7 \:V$, but it otherwise ideal. The magnitude of the current $i_{2}...
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120
GATE ECE 2014 Set 4 | Question: 7
The magnitude of current (in mA) through the resistor $R_2$ in the figure shown is __________
The magnitude of current (in mA) through the resistor $R_2$ in the figure shown is __________
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