Recent questions tagged electronic-devices

For small signal $a.c$. operation, a practical forward biased diode can be modelled asa resistance and a capacitance in seriesan ideal diode and resistance in parallela r...

The $\text{JFET}$ in the circuit of the figure is characterised by the parameters $\mathrm{I}_{\mathrm{DSS}}=4 \; \mathrm{MA}$ and $\mathrm{V}_{p}=-4 \mathrm{V}$.Find$\ma...

The bandgap of silicon at $300 \mathrm{~K}$ is$1.36 \; \mathrm{eV}$$1.10 \; \mathrm{eV}$$0.80 \; \mathrm{eV}$$0.67 \; \mathrm{eV}$

Choose proper substitutes for $\mathrm{X}$ and $\mathrm{Y}$ to make the following statement correct Tunnel diode and Avalanche photodiode are operated in $\mathrm{X}$ bia...

For an $n$-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. $V_{SB}>0$ ), the threshold voltage $V_T$ of the ...

Match items in Group $1$ with items in Group $2,$ most suitably.$$\begin{array}{ll} \textbf{Group 1} & \textbf{Group 2} \\ \text{P LED} & \text{1 Heavy doping} \\ \text{Q...

A particular green $\text{LED}$ emits light of wavelength $5490 \text{ A}$. The energy bandgap of the semiconductor material used there is (Planck's constant = $6.626 \ti...

The action of a $\text{JFET}$ in its equivalent circuit can best be represented as aCurrent Controlled Current SourceCurrent Controlled Voltage SourceVoltage Controlled V...

If for a silicon $n-p-n$ transistor, the base-to-emitter voltage $\left(\mathrm{V}_{\mathrm{KE}}\right)$ is $0.7 \mathrm{~V}$ and the collector-to-base voltage $\left(\ma...

Consider the following statements $\mathrm{S} 1$ and $\mathrm{S} 2$.$\text{S1 :}$ The $\beta$ of a bipolar transistor reduces if the base width is increased.$\text{S2 :}$...

An ideal $\text{op-amp}$ is an idealvoltage controlled current sourcevoltage controlled voltage sourcecurrent controlled current sourcecurrent controlled voltage source

Consider the following statements $\mathrm{S} 1$ and $\mathrm{S} 2$.$\mathrm{S} 1 :$ The threshold voltage $\left(V_{T}\right)$ of a MOS capacitor decreases with increase...

The drain of an $n$-channel MOSFET is shorted to the gate so that $V_{G S}=V_{D s}$. The threshold voltage $\left(V_{T}\right)$ of MOSFET is $1 \mathrm{~V}$. If the drain...

A bipolar transistor is operating in the active region with a collector current of $1 \mathrm{~mA}$. Assuming that the $\beta$ of the transistor is $100$ and the thermal ...

For an $\text{npn}$ transistor connected as shown in the figure, $V_{B E}=0.7$ volts. Given that reverse saturation current of the junction at room temperature $300^{\cir...

The voltage $e_{0}$ indicated in the figure has been measured by an ideal voltmeter. Which of the following can be calculated?Bias current of the inverting input onlyBias...

For an $n$-channel $\text{MOSFET}$ and its transfer curve shown in the figure, the threshold voltage is$1 \mathrm{~V}$ and the device is in active region.$-1 \mathrm{~V}$...

Common Data Questions 78, 79, 80Given, $r_{d}=20 \; \mathrm{k} \Omega, \mathrm{I}_{\mathrm{DSS}}=10 \mathrm{~mA}, \mathrm{~V}_{p}=-8 \mathrm{~V}$$Z_1$ and $Z_0$ of the ci...

Common Data Questions 78, 79, 80Given, $r_{d}=20 \; \mathrm{k} \Omega, \mathrm{I}_{\mathrm{DSS}}=10 \mathrm{~mA}, \mathrm{~V}_{p}=-8 \mathrm{~V}$$\mathrm{I}_{\mathrm{D}}$...

Common Data Questions 78, 79, 80Given, $r_{d}=20 \; \mathrm{k} \Omega, \mathrm{I}_{\mathrm{DSS}}=10 \mathrm{~mA}, \mathrm{~V}_{p}=-8 \mathrm{~V}$Transconductance in milli...

The break down voltage of a transistor with its base open is $\mathrm{BV}_{\mathrm{CEO}}$ and that with emitter open is $\mathrm{BV}_{\mathrm{CBO}^{‘}}$ then$\mathrm{BV}_...

A zener diode works on the principle oftunneling of charge carriers across the junctionthermionic emissiondiffusion of charge carriers across the junctionhopping of charg...

A $\text{BJT}$ is said to be operating in the saturation region ifboth the junctions are reverse biasedbase-emitter junction is reverse biased and base-collector junction...

The depletion capacitance, $\mathrm{C}_{\mathrm{J}}$, of an abrupt $\mathrm{P}-\mathrm{N}$ junction with constant doping on either side varies with reverse bias, $V_{R^{\...

The Ebers-Moll model is applicable tobipolar junction transistors$\text{NMOS}$ transistorsunipolar junction transistorsjunction field-effect transistors

Copper behaves as aconductor alwaysconductor or dielectric depending on the applied electric field strengthconductor or dielectric depending on the frequencyconductor or ...

An $\text{npn}$ transistor under forward-active mode of operation is biased at ${I}_{C} =1 \mathrm{~mA}$, and has a total emitter-base capacitance $\mathrm{C}_{K}$ of $12...

An $n$ – channel $\text{JFET}$ has $\mathrm{I}_{\text {DSS }}=1 \mathrm{~mA}$ and $\mathrm{V}_{P}=-5 \mathrm{~V}$.Its maximum transconductance is _________.